Microelectronics and Optoelectronics

Enabling materials research involving growth and characterization of novel devices such as multi-bit nonvolatile random access memory with fast erase, high performance circuits, and their potential applications in developing new high-speed systems. Other articles focus on emerging nanoelectronic devices including topological insulators, spatial wavefunction switching (SWS) FETs as compact high-speed 2-bit SRAM circuits, quantum dot channel (QDC) FETs. Fundamental work on critical layer thickness in ZnSe/GaAs and other material systems impacts electronic and photonic devise integrating mismatched layers are also reported. While another article investigates linearly graded GaAsP-GaAs system with emphasis on strain relaxation.